microwave corporation 14 - 36 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order online at www.hittite.com switches - smt 14 hmc190ms8 gaas mmic spdt switch dc - 3 ghz v01.0700 general description features functional diagram low insertion loss: 0.4db ultra small package: msop8 high input ip3: +50 dbm positive control: 0/+3v @ 10 ua electrical speci cations, t a = +25?c, vctl = 0/+3 to +8 vdc typical applications the hmc190ms8 is ideal for: mmds & wirelesslan portable wireless the hmc190ms8 is a low cost spdt switch in an 8-lead msop package. the switch can con- trol signals from dc to 3.0 ghz. it is especially suited for low and medium power applications using positive control voltages. the two control voltages require a minimal amount of dc current, which is optimal for battery powered radio sys- tems at 0.9, 1.9, and 2.4 ghz. the hmc190ms8 design provides exceptional third order intermod- ulation performance of +50 dbm. the design has been optimized for the small msop package, and maintains a vswr of better than 1.2:1 up to 2 ghz. this device is the positive control msop8 packaged version of our hmc239s8 negative control device. parameter frequency min. typ. max. units insertion loss dc - 1.0 ghz dc - 2.0 ghz dc - 2.5 ghz dc - 3.0 ghz 0.4 0.4 0.5 0.7 0.6 0.6 0.8 1.0 db db db db isolation dc - 1.0 ghz dc - 2.0 ghz dc - 2.5 ghz dc - 3.0 ghz 23 23 22 19 27 27 26 22 db db db db return loss dc - 1.0 ghz dc - 2.0 ghz dc - 2.5 ghz dc - 3.0 ghz 24 20 15 10 28 28 20 16 db db db db input power for 1 db compression (vctl = 0/+5v) 0.5 - 1.0 ghz 0.5 - 3.0 ghz 25 23 30 29 dbm dbm input third order intercept (vctl = 0/+5v)(two-tone input power = +7 dbm each tone) 0.5 - 1.0 ghz 0.5 - 3.0 ghz 45 44 50 49 dbm dbm switching characteristics dc - 3.0 ghz trise, tfall (10/90% rf) ton, toff (50% ctl to 10/90% rf) 3 10 ns ns
microwave corporation 14 - 37 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order online at www.hittite.com 14 switches - smt -3 -2.5 -2 -1.5 -1 -0.5 0 0 0.5 1 1.5 2 2.5 3 insertion loss (db) frequency (ghz) gaas mmic sub-harmonically pumped mixer 17 - 25 ghz hmc190ms8 insertion loss v01.0700 isolation return loss -50 -40 -30 -20 -10 0 0 0.5 1 1.5 2 2.5 3 isolation (db) frequency (ghz) -40 -30 -20 -10 0 0 0.5 1 1.5 2 2.5 3 input return loss (db) frequency (ghz) gaas mmic spdt switch dc - 3 ghz 15 20 25 30 35 3456789 control input (vdc) 1 db at 1900 mhz 1 db at 900 mhz 0.1 db at 1900 mhz 0.1 db at 900 mhz 45 47 49 51 53 55 456789 input third order intercept(dbm) control input (vdc) 900 mhz 1900 mhz input 0.1 and 1.0 db compression vs. control voltage input third order intercept point vs. control voltage
microwave corporation 14 - 38 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order online at www.hittite.com switches - smt 14 hmc190ms8 compression vs. control voltage caution: do not operate in 1db compression at power levels above +31dbm (vctl = +5 vdc) and do not ?hot switch? power levels greater than +20dbm (vctl = +5vdc). dc blocks are required at ports rfc, rf1 and rf2. v01.0700 distortion vs. control voltage gaas mmic spdt switch dc - 3 ghz truth table *control input voltage tolerances are 0.2 vdc. control input third order intercept (dbm) +7 dbm each tone (vdc) 900 mhz 1900 mhz +5 50 49 +8 53 51 carrier at 900 mhz carrier at 1900 mhz control input input power for 0.1 db compression input power for 1.0 db compression input power for 0.1 db compression input power for 1.0 db compression (volts) (dbm) (dbm) (dbm) (dbm) +3 17 20 17 20 +5 25 30 24 29 +8 31 33 30 32 control input* control current signal path state a (vdc) b (vdc) ia (ua) ib (ua) rf to rf1 rf to rf2 0 +3 -10 10 on off +3 0 10 -10 off on 0 +5 -55 55 on off +5 0 55 -55 off on 0 +7 -210 210 on off +7 0 210 -210 off on 0 +8 -280 280 on off +8 0 280 -280 off on
microwave corporation 14 - 39 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order online at www.hittite.com 14 switches - smt hmc190ms8 v01.0700 absolute maximum ratings outline drawing gaas mmic spdt switch dc - 3 ghz notes: 1. package body material: low stress injection molded plastic silica and silicon impregnated. 2. leadframe material: copper alloy 3. leadframe plating: sn/pb solder 4. dimensions are in inches [millimeters]. 5. dimension does not include moldflash of 0.15mm per side. 6. dimension does not include moldflash of 0.25mm per side. 7. all ground leads must be soldered to pcb rf ground. max. input power v ctl = 0/+8v 0.5 ghz 0.5 - 2 ghz +27 dbm +34 dbm control voltage range (a & b) -0.2 to +12 vdc storage temperature -65 to +150 c operating temperature -40 to +85 c
microwave corporation 14 - 40 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order online at www.hittite.com switches - smt 14 hmc190ms8 v01.0700 gaas mmic spdt switch dc - 3 ghz typical application circuit notes: 1. set logic gate and switch vdd = +3v to +5v and use hct series logic to provide a ttl driver interface. 2. control inputs a/b can be driven directly with cmos logic (hc) with vdd of 5 to 8 volts applied to the cmos logic gates. 3. dc blocking capacitors are required for each rf port as shown. capacitor value determines lowest frequency of operation. 4. highest rf signal power capability is achieved with vdd = +8v and a/b set to 0/+8v.
microwave corporation 14 - 41 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order online at www.hittite.com 14 switches - smt hmc190ms8 v01.0700 gaas mmic spdt switch dc - 3 ghz evaluation circuit board the circuit board used in the ? nal application should be generated with proper rf circuit design tech- niques. signal lines at the rf port should have 50 ohm impedance and the package ground leads and package bottom should be connected directly to the ground plane similar to that shown above. the evalu- ation circuit board shown above is available from hit- tite microwave corporation upon request. list of material item description j1 - j3 pc mount sma rf connector j4 - j6 dc pin c1 - c3 330 pf capacitor, 0402 pkg. u1 hmc190ms8 spdt switch pcb* 101777 evaluation pcb * circuit board material: rogers 4350
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